ASU Directory Profile
Compound semiconductor materials and devices, especially wide bandgap materials for optoelectronic, high frequency, high-power, and high-temperature applications; optical characterization of semiconductor materials, development of GaN and SiC-based materials and devices.
Brian Skromme joined the ASU faculty in 1989, where he is presently a professor in solid-state electronics. From 1985 to 1989, he was a member of the technical staff at Bellcore. He has written over 120 refereed publications in solid-state electronics.
Ph.D., electrical engineering, University of Illinois at Urbana-Champaign, 1985
M.S., electrical engineering, University of Illinois at Urbana-Champaign, 1980
B.S., electrical engineering, University of Wisconsin-Madison, 1978
Recognition and awards
Eta Kappa Nu, Young Faculty Teaching Award, 1990-1991
Golden Key National Honor Society Outstanding Professor Award, 1991
Listed in Who’s Who in Science and Engineering and Who’s Who in Engineering Education
B. J. Skromme, A. Sasikumar, B. M. Green, O. L. Hartin, C. E. Weitzel, and M. G. Miller, “Reduction of low-temperature nonlinearities in pseudomorphic AlGaAs/InGaAs HEMTs due to Si-related DX centers,” IEEE Trans. Electron Devices 57 (4), 749-754 (2010).
Y. Wang, P. A. Losee, S. Balachandran, I. B. Bhat, T. P. Chow, Y. Wang, B. J. Skromme, J. K. Kim, and E. F. Schubert, “Achieving low sheet resistance from implanted p-type layers in 4H-SiC using high temperature graphite capped annealing,” Mater. Sci. Forum 556-557, 567-571 (2007).
Y. Wang, M. K. Mikhov, and B. J. Skromme, “Formation and properties of Schottky diodes on 4H-SiC after high temperature annealing with graphite encapsulation,” Mater. Sci. Forum 527-529, 915-918 (2006).
A. Mahajan and B. J. Skromme, “Design and Optimization of Junction Termination Extension (JTE) for 4H-SiC High Voltage Schottky Diodes,” Solid State Electron, 49, 945–955, 2005.
L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H.-X. Jiang, “Band-edge Exciton States in AlN Single Crystals and Epitaxial Layers,” Appl. Phys. Lett. 85, 4334-4336, 2004.