ASU Directory Profile
Semiconductors for hostile environments, device physics and modeling, microelectronic device and sensor design and manufacturing, analog/RF/mixed signal circuit design and test
Hugh Barnaby joined the ASU faculty in 2004. Prior to coming to ASU, he was an assistant professor at the University of Arizona. His primary research focuses on the analysis, modeling, and experimental characterization of extreme environment effects in semiconductor materials, devices and integrated circuits. As part of this research, he also develops design and processing techniques that enable the reliable operation of electronics in these environments. In addition, Barnaby has ongoing research activities in wireless (RF and optical) IC and data converter design, radiation- and reliability-enabled compact modeling, and memristor technologies and applications. He has been an active researcher in the microelectronics field for 19 years in both industry and academics, presenting and publishing more than 100 papers during this time.
Collaborations and industry affiliations
Basic radiation effects mechanisms in chalcogenide-based nanoionic structures, DOD-DTRA
Total ionizing dose engineering for 0.25 um HV, Medtronic
Data analysis and organization, Medtronic
Physically based analytical model for transient radiation effects in floating body SOI transistors, Vanderbilt University
Chalcogenide glass radiation sensor; materials development, design and device testing, BSU
Assistant Professor, University of Arizona, 2001-2004
Staff Scientist, Mission Ranch Corporation microelectronics division
Ph.D., electrical engineering, Vanderbilt University, 2001
M.S., electrical engineering, Vanderbilt University, 1999
B.A., mathematics and philosophy, University of California – Berkeley, 1992
Recognition and awards
ONR Faculty Research Fellow
Session chairperson, 2008 IEEE IRPS, 2005 RADECS conference, 2002 IEEE NSREC
Short Course Chairman, IEEE NSREC 2007
Poster Chairman, IEEE NSREC 2006
Short Course Instructor, NSREC 2005
Awards Committee, IEEE NSREC 2003, 2008, Solid State Circuits Society Phoenix Section Chairman
Senior Member IEEE
Solid State Circuits Society Phoenix Section Chairman
H.J. Barnaby, S. Malley, M. Land, S. Charnicki, A. Kathuria, B. Wilkens, E. DeIonno, W. Tong, “Impact of Alpha Particles on the Electrical Characteristics of TiO2 Memristors,” IEEE Trans. on Nuclear Science, vol. 58, no. 6, pp. 2838-2844, 2011.
I.S. Esqueda, H. J. Barnaby, K. E. Holbert, F. El-Mamouni, R. D. Schrimpf, “Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors,” IEEE Trans. on Nuclear Science, vol. 58, no. 2, pp. 499 – 505, 2011.
I. S. Esqueda, H. J. Barnaby, M. L Mclain, P. C. Adell, F. E. Mamouni, S. K. Dixit, R. D. Schrimpf, and W. Xiong, “Modeling the radiation response of fully-depleted SOI n-channel MOSFETs,” IEEE Trans. on Nuclear Science, vol. 56, no. 4, pp. 2247-2250, 2009.
X. J. Chen, H. J. Barnaby, P. Adell, R. L. Pease, B. Vermeire, and K. E. Holbert, “Modeling the dose rate response and the effects of hydrogen in bipolar technologies,” IEEE Trans. on Nuclear Science, vol. 56, no. 6, pp. 3196-3202, 2009.
W. Chen, T. Copani, H. J. Barnaby, and S. Kiaei, “A 14-GHz CMOS receiver with local oscillator and IF bandpass filter for satellite applications,” 2009 IEEE Radio Frequency Integrated Circuits Symposium, June 7-9, 2009, pp. 123-126.
M. L. McLain, H. J. Barnaby, I. S. Esqueda, J. Oder, and B. Vermeire, “Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors,” 2009 IEEE International Reliability Physics Symposium Proceedings, April 26-30, 2009, pp. 174-179.