Srabanti Chowdhury

Assistant Professor
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Research expertise
power electronics, gallium nitride material for device application in high voltage and high frequency electronics, High Electron Mobility Transistors (HEMTs), device reliability, understanding failure modes (at a product level), device physics, study of dielectric materials and its characterization and device simulation

Chowdhury joined ASU in 2013. She received her Ph.D. in December, 2010 from University of California, Santa Barbara working under Professor Umesh Mishra. Her Ph.D. research was focused on Gallium Nitride (GaN) vertical devices for power electronic (high voltage) application. Gallium Nitride is the new semiconductor material for energy efficient applications and is revolutionizing and redefining power conversion in the present time. As part of her Ph.D. thesis she fabricated the first Gallium Nitride vertical transistor that demonstrated high voltage handling igniting interest in vertical devices in GaN. The effort was funded by Toyota Motor Corporation, Japan for developing energy efficient hybrid car inverter switches. She joined the Transphorm team, a leader in the Gallium Nitride technology, in May 2010 to develop reliable and manufacturable Gallium nitride-based high voltage device (>900V) for efficient power conversions. During her stay in the company she successfully designed and fabricated 900V-1200V Gallium Nitride High Electron Mobility Transistors (HEMTs) on both Silicon Carbide and Si substrates which are highly desired for economic viability for the technology. The devices with breakdown voltages greater than 1kV was successfully incorporated into modules for motor drive applications resulting in the first demonstration of high frequency GaN-on-Si based motor drive in the world. She has also been involved in developing novel techniques to make the devices fail-proof and reliable – highly needed for commercialization. Her ideas and designs have resulted in over 8 patent applications in the last 2 years. Her other research expertise involves fundamental research to understand the physics of the device leading to different device properties. In an experimental work done with Masataka Higashiwaki (which was also verified  independently using first principle techniques by Maosheng Miao in Chris Vandewalle’s group), the accepted origin of surface barrier height in AlGaN/GaN material system was challenged by the new findings that have led to renewed research interest and questions in the topic. She was also actively involved in dielectric studies and characterization of materials using electrical measurements both during her Ph.D. research and work at Transphorm. Her work has led to renewed contracts and revenue earnings in the company and which has been recognized with internal awards of appreciation in the company. She received her M.S. from UCSB and B.Tech. from Institute of Radiophysics and Electronics, India with highest honors. She has coauthored over 8 journal publication and presented in over 15 conferences till date.

Professional preparation
Ph.D., electrical and computer engineering, UC Santa Barbara, 2010
M.S., electrical and computer engineering, UC Santa Barbara
B.Tech., Institute of Radiophysics and Electronics in India