Physics and modeling of semiconductor devices, semiconductor transport physics, integrated circuit technology
Gennady Gildenblat received an MSEE (with honors) from the St. Petersburg Electrical Engineering Institute in 1975 and a PhD degree in solid-state physics from the Rensselaer Polytechnic Institute in 1984. He works in the areas of semiconductor device physics and modeling, novel semiconductor devices and semiconductor transport. Professor Gildenblat has over 150 publications in these areas including several books, invited articles and US patents. In 1980, he joined the General Electric Corporate Research and Development Center in Schenectady, NY, where he was engaged in various aspects of semiconductor device physics and IC technology development. Between 1984 and 1986, he supervised the Cryogenic CMOS device engineering study at the Digital Equipment Corporation in Hudson, MA. From 1986, Professor Gildenblat was with The Pennsylvania State University, until in 2006, when he joined Arizona State University. He has developed an advanced surface-potential-based SP and PSP compact MOSFET model. The PSP model (joint development with NXP) was selected as an international industry standard by the Compact Model Council (PSPmodel.asu.edu) in 2006. In 2007, PSP-based compact varactor model (joint development with Jazz semiconductor) became another industry standard.
Collaborations and industry affiliations
Gildenblat,Gennady * . Physical Foundation for Compact Model of LDMOS for High Power and Analog Applications. SEMICONDUCTOR RESEARCH CORP (10/1/2011 – 12/31/2012).
Gildenblat,Gennady * . Compact Model and LDMOS and DEMOS for High Power and Analog Applications. SRC ENGR. RES. CTR. (1/1/2010 – 6/30/2011).
Jalali-Farahani,Bahar * , Barnaby,HughJames , Gildenblat,Gennady , Vermeire,Bert , . Self-Healing Self-Adaptive Low Power High-Resolution Analog-to-Digital Converters for Space Applications. JPL (4/2/2009 – 3/9/2010).
Barnaby,HughJames * Gildenblat,Gennady Vermeire,Bert . Self-healing self-adaptive low power analog-to-digital converters for space applications. JPL (5/8/2008 – 5/3/2009).
Gildenblat,Gennady * . Extensions and Improvements to the PSP Compact Model. SEMICONDUCTOR RESEARCH CORP (10/1/2006 – 9/30/2009).
Ph.D., solid-state physics, Renssalaer Polytechnic Institute, 1984
M.S.E.E., St. Petersburg Electrical Engineering Institute, 1975
Recognition and awards
Semiconductor Research Corporation Technical Excellence Award recipient, 2006
W. Yao, G. Gildenblat, C. C. McAndrew, and A. Cassagnes, “SP-HV: A scalable surface-potential-based compact model for LDMOS transistors,” IEEE Trans. Electron Devices, vol. 59, pp. 542-550, March, 2012
W. Yao, G. Gildenblat, C. C. McAndrew, and A. Cassagnes, “Generalized Berglund relation in LDMOS transistors,” Electron. Lett., vol. 47, no. 16, pp. 936-937, Aug. 2011
“Compact Modeling – Principles, Techniques and Applications,” G. Gildenblat (Ed) , Springer, 2010
Z. Zhu, A. Kathuria, S.G. Krishna, M. Mojarradi, B. Jalali-Farahani, H. Barnaby, W. Wu, and G. Gildenblat, “Design applications of compact MOSFET model for the extended temperature range (60-400K) ,” Electronics Letters, Vol. 47, No. 2, 2011, pp. 141-142.
X. Li, C. C. McAndrew, W. Wu, S. Chaudhry, J. Victory, G. Gildenblat, “Statistical modeling with the PSP MOSFET model ,” IEEE Transactions on Computer-aided Design of Integrated Circuits and Systems, Vol. 29, 2010, pp. 599–606.
G. Dessai, G. Gildenblat, “Solution space for the independent-gate asymmetric DGFET ,” Solid-State Electronics, Vol. 54, 2010, pp 382-384.