Hugh BarnabyHugh Barnaby

Associate Professor
ASU Directory Profile

ISTB4 561

Research expertise: Semiconductors for hostile environments, device physics and modeling, microelectronic device and sensor design and manufacturing, analog/RF/mixed signal circuit design and test

Hugh Barnaby joined the ASU faculty in 2004. Prior to coming to ASU, he was an assistant professor at the University of Arizona. His primary research focuses on the analysis, modeling and experimental characterization of extreme environment effects in semiconductor materials, devices and integrated circuits. As part of this research, he also develops design and processing techniques that enable the reliable operation of electronics in these environments. In addition, Barnaby has ongoing research activities in wireless (RF and optical) IC and data converter design, radiation-enabled compact modeling, and memristor technologies and applications. He has been an active researcher in the microelectronics field for 18 years in both industry and academics, presenting and publishing more than 100 papers during this time.

Collaborations and industry affiliations
Basic radiation effects mechanisms in chalcogenide-based nanoionic structures, DOD-DTRA
Total ionizing dose engineering for 0.25 um HV, Medtronic
Data analysis and organization, Medtronic
Physically based analytical model for transient radiation effects in floating body SOI transistors, Vanderbilt University
Chalcogenide glass radiation sensor; materials development, design and device testing, BSU

Professional preparation
Assistant Professor, University of Arizona, 2001-2004
Staff Scientist, Mission Ranch Corporation microelectronics division
Ph.D., electrical engineering, Vanderbilt University, 2001
M.S., electrical engineering, Vanderbilt University, 1999
B.A., mathematics and philosophy, University of California – Berkeley, 1992

Recognition and awards
ONR Faculty Research Fellow
Session chairperson, 2008 IEEE IRPS, 2005 RADECS conference, 2002 IEEE NSREC
Short Course Chairman, IEEE NSREC 2007
Poster Chairman, IEEE NSREC 2006
Short Course Instructor, NSREC 2005
Awards Committee, IEEE NSREC 2003, 2008, Solid State Circuits Society Phoenix Section Chairman

Professional associations
Senior Member IEEE
Solid State Circuits Society Phoenix Section Chairman

Selected publications

Chen, R. Fang, M. B. Balaban, W. Yu, Y. Gonzalez-Velo*, H. J. Barnaby, M. N

Kozicki, “A CMOS-compatible electronic synapse device based on Cu-SiO2-W programmable metallization cells,” Nanotechnology, vol. 27, p. 255202 (1-9),

Gonzalez-Velo*, A. Mahmud, W. Chen, J. Taggart, H. Barnaby, M. Kozicki, M. Ailavajhala, K. E. Holbert, M. Mitkova, “Radiation Hardening by Process of CBRAM Resistance Switching Cells,” IEEE Transactions on Nuclear Science, DOI 10.1109/TNS.2016.2569076, 2016,

Saremi, A. Privat, H. J. Barnaby, L. T. Clark, “Physically Based Predictive Model for Single Event Transients in CMOS Gates,” IEEE Transactions on Electron Devices, vol. 63, pp. 2248-2254, 2016.

Wolf, M. S. Ailavajhala, D. A. Tenne, H. Barnaby, M. N. Kozicki, and M. Mitkova, “Electron beam effects in Ge-Se thin films and resistance change memory devices,” Emerging Materials Research, DOI 10.1680/jemmr.15.00042, 2016.

Chen, H. J. Barnaby, and M. N. Kozicki, “Volatile and Non-Volatile Switching in Cu- SiO2 Programmable Metallization Cells,” IEEE Electron Device Letters, vol. 37, pp. 580- 583, 2016.

Chen, H. J. Barnaby, and M. N. Kozicki, “Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer,” IEEE Electron Device Letters, vol. 37, pp. 576-579, 2016.

Mahalanabis, R. Liu, H. J. Barnaby, S. Yu, M. N. Kozicki, A. Mahmud, E. Deionno, “Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays,” IEEE Transactions on Nuclear Science, vol. 62, pp. 2606-2612,

Esqueda and H. J. Barnaby, “A defect-based compact modeling approach for the reliability of CMOS devices and integrated circuits,” Solid-State Electronics, vol. 91, pp. 81-86, 2014.

Gonzalez-Velo, H. J. Barnaby, M. N. Kozicki, C. Gopalan, and K. Holbert, “Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory,” Electron Device Letters, IEEE, vol. 35, pp. 205-207, 2014.