ASU Directory Profile
Research expertise: Nanoionics, dendritic/fractal structures, low-energy resistive memory (CBRAM, RRAM)
Michael Kozicki joined ASU in 1985 from Hughes Microelectronics. He is a professor of electrical engineering and a fellow of the National Academy of Inventors. He is the inventor of the Programmable Metallization Cell, a technology platform for several innovations including Conductive Bridging Random Access Memory (CBRAM®). He has produced over 200 papers, patents and presentations that have been cited around 7,000 times. Kozicki is also a founder of Axon Technologies Corp. and Idendrix, Inc., and served as chief scientist of Silicon Valley start-up Adesto Technologies.
He has developed entrepreneurship-infused undergraduate and graduate courses in solid state electronics, is a frequent invited speaker at international meetings and has made several television appearances to promote public understanding of science. He has extensive international ties, including as a visiting professor at the University of Edinburgh in Scotland, adjunct professor at Gwangju Institute of Science and Technology in Korea and also holds the professional designation of chartered engineer in the UK/EU. He has served as interim and founding director of entrepreneurial programs and director of the Center for Solid State Electronics Research in the Ira A. Fulton Schools of Engineering at ASU.
Ph.D., electronics and electrical engineering, University of Edinburgh, 1985
B.Sc., electronics and electrical engineering, University of Edinburgh, 1980
Recognition and awards
Fellow, National Academy of Inventors; Chartered Engineer (UK/EC Professional Engineer); Member, Institute of Physics; Member, IEEE/HKN; Founder, Axon Technologies Corporation and Idendrix, Inc.; Charter member of the ASU Academic Council; ASU Faculty Achievement Award (Most Significant Invention) (2007); Founding Member, Globalscot Network (appointed by the First Minister of Scotland); Best Paper Awards, Non-Volatile Memory Technology Symposium (2005) and European Symposium on Phase Change and Ovonic Science (2006); IEEE Phoenix Section Outstanding Educator, Research Award (2001)
Valov, R. Waser, J.R. Jameson and M.N. Kozicki, “Electrochemical metallization memories—fundamentals, applications, prospects,” Nanotechnology, vol. 22, doi:10.1088/0957–4484/22/25/254003 (2011).
J.R. Jameson, N. Gilbert, F. Koushan, J. Saenz, J. Wang, S. Hollmer, and M.N. Kozicki, “Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells,” Appl. Phys., Lett., Vol. 100, DOI: 10.1063/1.3675870 (2012).
Lu, D.S. Jeong, M.N. Kozicki, R. Waser, “Electrochemical metallization cells-blending nanoionics into nanoelectronics?” MRS Bulletin, Vol. 37, 124-130 (2012).
Valov and M.N. Kozicki, “Cation-based resistance change memory,” J. Phys. D-Appl. Phys., vol. 46, art. no.: 074005 (2013).
Gonzalez-Velo, H. J. Barnaby, M. N. Kozicki, C. Gopalan, and K. Holbert, “Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory,” IEEE Elec. Dev. Lett., IEEE, vol. 35, pp. 205-207, 2014.