ASU Directory Profile
Research expertise: Electronics and photonics; MOCVD growth and device applications of GaN wide bandgap semiconductors, including LEDs, lasers, solar cells, and power transistors; nanofabrication and nanoscale characterizations; new physics, materials, devices for future solid-state electronics
Yuji Zhao received a bachelor’s degree in Microelectronics from Fudan University, China, in 2008, and a Ph.D in Electrical and Computer Engineering from University of California, Santa Barbara (UCSB) in 2012. Prior to joining ASU in 2014, he was an assistant project scientist in the Materials Department and Solid State Lighting and Energy Center (SSLEC) at UCSB. Zhao has worked extensively on GaN materials and devices, with more than 50 conference and journal publications, one book chapter, and over 10 patents, and has won Outstanding Research Award from UCSB for a record four consecutive times (2010 to 2013). His work on GaN LEDs and lasers was recognized with a Most Cited Article of the Year Award from Applied Physics Express, an Editor’s Pick of the Year Award from Applied Physics Letters, a Best Paper Award from CLEO, and was featured in over 100 international news outlets in five languages, including Science, Nature Photonics, Optical Society of America (OSA), Compound Semiconductors, and Yahoo. Since joining ASU in August 2014, he has received 2015 Bisgrove Scholar Faculty Award and 2015 NASA Early Career Faculty Award.
Ph.D., electrical and computer engineering, University of California, Santa Barbara, 2012
B.S., microelectronics, Fudan University, China, 2008
Recognition and awards
Applied Physics Letters Editor’s Picks of the Year, 2012
Applied Physics Express Most Cited Articles of the Year, 2012
Semi-Finalist, CLEO Thedore Mainman Paper Competition, 2012
UCSB SSLEC Outstanding Research Achievement Award, 2010-2013
Fudan Scholarship for Excellency in Undergraduate Study, 2004
H. Fu, Z. Lu, and Y. Zhao, “Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect“, AIP Adv., vol. 6, 065013 (2016).
X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Analysis of loss mechanisms in InGaN solar cells using a semi-analytical model“, J. Appl. Phys., vol. 119, 213101 (2016).
H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent Intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications“, J. Appl. Phys., vol. 119, 174502 (2016).
H. Chen, H. Fu, Z. Lu, X. Huang, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating“, Opt. Express, vol. 24, A856 (2016).
H. Fu, Z. Lu, X. Zhao, Y. H. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low efficiency droop in semipolar (20-2-1) InGaN light-emitting diodes by time-resolved photoluminescence”, J. Display Technol., vol. 12, 736 (2016).
R. Ivanov, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier localization on radiative recombination times in semipolar (20-21) InGaN/GaN quantum wells“, Appl. Phys. Lett., vol. 107, 211109 (2015).