Houqiang Fu
Assistant Professor
Research interests
Wide and ultrawide bandgap semiconductors, III-nitrides, gallium oxide, power electronics and integrated circuits, high-electron mobility transistors, vertical power devices, extreme environment devices, optoelectronics, RF/microwave devices, photonics, MOCVD growth, solid-state physics, device simulation and modeling, nanofabrication, nanoscale characterization, device reliability and failure analysis