New findings by an Arizona State University engineer outline new advances in solar cell technology and point to the incredible potential of the material used to fabricate the cell — gallium nitride.
A research paper published April 17 in Applied Physics Letters details electrical engineering Assistant Professor Yuji Zhao’s efforts to use gallium nitride to create a high-performance solar cell capable of operating under extremely high temperatures.
Gallium nitride is a unique compound, the properties of which make it an excellent candidate for use in optoelectronics and high-power and high-frequency devices.
“This material is remarkable and has such high potential,” asserts Zhao.
Zhao notes that some have called gallium nitride the next silicon — the ubiquitous material that serves as an integral component of many of our electronics, from computer chips and solar cells to transistors and integrated circuits. Gallium nitride could prove to be superior to silicon, and Zhao’s work is paving the way toward faster, more efficient and higher-powered devices of all kinds.